Philips Semiconductors Product specification
Rectifier diodes BYV72EW series
ultrafast, rugged
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance junction to per diode - - 2.4 K/W
mounting base both diodes conducting - - 1.4 K/W
Thermal resistance junction to in free air - 45 - K/W
ambient
Rth j-a
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj
= 25 ?C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VF
Forward voltage IF
= 15 A; T
j
= 150?C - 0.83 0.90 V
IF
= 15 A - 0.95 1.05 V
IF
= 30 A - 1.00 1.20 V
Reverse current VR
= V
RWM; Tj
= 100 ?C - 0.5 1 mA
VR
= V
RWM
- 10 100
μA
Reverse recovery charge IF
= 2 A; V
R
≥
30 V; -dI
Reverse recovery time I
F/dt = 20 A/μs- 6 15 nC
F
= 1 A; V
R
≥
30 V; - 20 28 ns
-dIF/dt = 100 A/μs
Reverse recovery time IF
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A - 13 22 ns
Forward recovery voltage IF
= 1 A; dI
F/dt = 10 A/μs-1-V
IR
Q
t
s
rr1
t
Vrr2fr
October 1998 2 Rev 1.200
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